Slkor SACoMicro-SL40T65FL insulated gate bipolar transistor IGBT
Product classification:【Slkor】
Function overview:
金融財(cái)經(jīng)
IGBT (insulated gate bipolar transistor), an insulated gate bipolar transistor, is composed of bipolar transistor (BJT) and insulated gate field effect transistor (MOS), which has the advantages of high input impedance of Metal Oxide Semiconductor field effect transistor (MOSFET) and low on-voltage drop of giant transistor (GTR). The saturation voltage of GTR decreases, the current carrying density is high, but the driving current is large; The driving power of MOSFET is very small and the switching speed is fast, but the turn-on voltage drop is large and the current carrying density is small. IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. It is very suitable for converter systems with DC voltage of 600V and above, such as AC motors and frequency converters.